1. Product Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms arranged in a tetrahedral latticework, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing phenomenal atomic bond strength.
The Si– C bond, with a bond energy of approximately 318 kJ/mol, is among the strongest in structural porcelains, giving superior thermal stability, hardness, and resistance to chemical attack.
This durable covalent network causes a product with a melting factor surpassing 2700 Ā° C(sublimes), making it one of the most refractory non-oxide ceramics available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC maintains mechanical stamina and creep resistance at temperatures over 1400 Ā° C, where several metals and standard porcelains start to soften or deteriorate.
Its low coefficient of thermal growth (~ 4.0 Ć 10 ā»ā¶/ K) integrated with high thermal conductivity (80– 120 W/(m Ā· K)) makes it possible for rapid thermal biking without catastrophic splitting, an important quality for crucible efficiency.
These innate properties originate from the balanced electronegativity and comparable atomic dimensions of silicon and carbon, which advertise an extremely secure and densely loaded crystal framework.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are commonly fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a decisive duty in sturdiness and thermal shock resistance.
Sintered SiC crucibles are generated through solid-state or liquid-phase sintering at temperatures over 2000 Ā° C, usually with boron or carbon ingredients to boost densification and grain boundary cohesion.
This procedure yields a totally dense, fine-grained structure with marginal porosity (
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